发明授权
- 专利标题： Dielectrically isolated IC merged with surge protection circuit and method for manufacturing the same
- 专利标题（中）： 电感隔离IC与浪涌保护电路及其制造方法相结合
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申请号： US873081申请日： 1997-06-11
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公开(公告)号： US5825067A公开(公告)日： 1998-10-20
- 发明人: Yoshinori Takeuchi , Koichi Endo
- 申请人： Yoshinori Takeuchi , Koichi Endo
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX8-151044 19960612
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L27/02 ; H01L27/06 ; H01L27/12 ; H01L29/866 ; H01L21/782 ; H01L29/74
摘要：
A semiconductor IC comprising a supporting substrate; a first buried insulator film formed partially on the supporting substrate; a second buried insulator film thinner than the first buried insulator film formed partially on the supporting substrate; a plurality of island-shaped semiconductor layers formed on the first and second buried insulator films, respectively; and dielectric isolation regions formed between the plurality of island-shaped semiconductor layers. A surge protection circuit is formed in the island-shaped semiconductor layer formed on the second buried insulator film and also an internal circuit is formed in other island-shaped semiconductor layers formed on the first buried insulator film. Surface wirings are disposed to interconnect the surge protection circuit and the internal circuit.
公开/授权文献
- USD343742S Sofa 公开/授权日：1994-02-01
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