Invention Grant
US5830796A Method of manufacturing a semiconductor device using trench isolation
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使用沟槽隔离制造半导体器件的方法
- Patent Title: Method of manufacturing a semiconductor device using trench isolation
- Patent Title (中): 使用沟槽隔离制造半导体器件的方法
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Application No.: US668826Application Date: 1996-06-24
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Publication No.: US5830796APublication Date: 1998-11-03
- Inventor: Kyeong Bock Lee
- Applicant: Kyeong Bock Lee
- Applicant Address: KRX Kyungki-Do
- Assignee: Hyundai Electronics Industries Co., Ltd.
- Current Assignee: Hyundai Electronics Industries Co., Ltd.
- Current Assignee Address: KRX Kyungki-Do
- Priority: KRX1995-17290 19950624
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/762
Abstract:
The present invention discloses a method of manufacturing a semiconductor device, comprising the steps of: forming a transistor on a silicon substrate; forming a trench by etching a selected portion of the silicon substrate; and forming an interlayer insulating film on the resulting structure after forming said trench, thereby forming a device isolation film in the trench.
Public/Granted literature
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