发明授权
US5831921A Semiconductor memory device having signal generating circuitry for
sequentially refreshing memory cells in each memory cell block in a
self-refresh mode
失效
具有信号产生电路的半导体存储器件,用于以自刷新模式顺序刷新每个存储单元块中的存储器单元
- 专利标题: Semiconductor memory device having signal generating circuitry for sequentially refreshing memory cells in each memory cell block in a self-refresh mode
- 专利标题(中): 具有信号产生电路的半导体存储器件,用于以自刷新模式顺序刷新每个存储单元块中的存储器单元
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申请号: US895064申请日: 1997-07-16
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公开(公告)号: US5831921A公开(公告)日: 1998-11-03
- 发明人: Masaki Tsukude
- 申请人: Masaki Tsukude
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX7-321656 19951211
- 主分类号: G11C11/403
- IPC分类号: G11C11/403 ; G11C11/401 ; G11C11/406 ; G11C11/407 ; G11C11/408 ; G11C11/409 ; G11C7/00
摘要:
In a DRAM, an upper address is assigned to each of ways W0 and W1, and a lower address is assigned to each word line WL in each of ways W0 and W1. A self-refresh start trigger generating circuit senses start of self-refresh, and a refresh address change sensing circuit senses change in an upper address. Based on the result of sensing, way selection signals RX0 and RX1 will not be reset and held at an active level while ways W0 and W1 are selected, respectively. Consequently, power consumption can be reduced compared to a conventional example in which signals RX0 and RX1 are reset every time a single word line WL is selected.
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