发明授权
US5833939A Ba(B.sub.1- x M.sub.x).sub.2 O.sub.4 single crystal and synthesis thereof
失效
Ba（B1- xMx）2O4单晶及其合成
- 专利标题： Ba(B.sub.1- x M.sub.x).sub.2 O.sub.4 single crystal and synthesis thereof
- 专利标题（中）： Ba（B1- xMx）2O4单晶及其合成
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申请号： US759775申请日： 1996-12-03
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公开(公告)号： US5833939A公开(公告)日： 1998-11-10
- 发明人: Hideo Kimura , Takenori Numazawa , Mitsunori Sato
- 申请人： Hideo Kimura , Takenori Numazawa , Mitsunori Sato
- 申请人地址： JPX
- 专利权人： National Research Institute for Metals
- 当前专利权人： National Research Institute for Metals
- 当前专利权人地址： JPX
- 主分类号： C01B35/10
- IPC分类号： C01B35/10 ; C30B15/00
摘要：
A low-temperature phase oxide single crystal having a nominal composition of Ba(B.sub.1-x M.sub.x).sub.2 O.sub.4 is synthesized by partially substituting B of BaB.sub.2 O.sub.4 with one or more additive elements M and by growing the single crystal in a Ba(B.sub.1-x M.sub.x).sub.2 O.sub.4 composition compound (where M is one or more additive elements selected from the group consisting of Al, Ga and In, and 0.001
公开/授权文献
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