发明授权
US5834800A Heterojunction bipolar transistor having mono crystalline SiGe intrinsic
base and polycrystalline SiGe and Si extrinsic base regions
失效
具有单晶SiGe本征基极和多晶SiGe和Si外基极区的异质结双极晶体管
- 专利标题： Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions
- 专利标题（中）： 具有单晶SiGe本征基极和多晶SiGe和Si外基极区的异质结双极晶体管
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申请号： US610026申请日： 1996-03-04
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公开(公告)号： US5834800A公开(公告)日： 1998-11-10
- 发明人: Bahram Jalali-Farahani , Clifford Alan King
- 申请人： Bahram Jalali-Farahani , Clifford Alan King
- 申请人地址： NJ Murray Hill
- 专利权人： Lucent Technologies Inc.
- 当前专利权人： Lucent Technologies Inc.
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/265 ; H01L21/331 ; H01L29/165 ; H01L29/737 ; H03K3/286 ; H03K19/082 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109
摘要：
A heterojunction bipolar transistor in an integrated circuit has intrinsic and extrinsic base portions. The intrinsic base portion substantially comprises epitaxial silicon-germanium alloy. The extrinsic base portion substantially comprises polycrystalline material, and contains a distribution of ion-implanted impurities. An emitter overlies the intrinsic base portion, and a spacer at least partially overlies the emitter. The spacer overhangs the extrinsic base portion by at least a distance characteristic of lateral straggle of the ion-implanted impurities.
公开/授权文献
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