发明授权
US5837610A Chemical mechanical polishing (CMP) apparatus and CMP method using the
same
失效
化学机械抛光(CMP)装置和使用其的CMP方法
- 专利标题: Chemical mechanical polishing (CMP) apparatus and CMP method using the same
- 专利标题(中): 化学机械抛光(CMP)装置和使用其的CMP方法
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申请号: US805659申请日: 1997-02-27
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公开(公告)号: US5837610A公开(公告)日: 1998-11-17
- 发明人: Byoung-hun Lee , Joon-hee Lee
- 申请人: Byoung-hun Lee , Joon-hee Lee
- 申请人地址: KRX Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KRX Suwon
- 优先权: KRX19965097 19960228
- 主分类号: B24B1/00
- IPC分类号: B24B1/00 ; B24B37/00 ; B24B37/20 ; B24B37/24 ; B24B57/02 ; H01L21/304 ; H01L21/306 ; H01L21/3105
摘要:
A chemical mechanical polishing (CMP) apparatus for planarizing a semiconductor wafer includes a wafer carrier for loading and fixing a semiconductor wafer to be polished and a polishing platen rotating at a constant speed, disposed at a lower portion of the wafer carrier. A polishing pad is provided on an upper surface of the polishing platen, and is in contact with a surface of the semiconductor wafer. A spiral slurry feed line supplies a slurry solution to the polishing pad. An end of the spiral slurry feed line is provided with a plurality of nozzles and the spiral slurry feed line is connected to a deionized water feed line that is opened or closed by a valve. Accordingly, abrasives are prevented from being precipitated, and the slurry solution is uniformly supplied to the semiconductor wafer, to thereby enhance polishing uniformity.
公开/授权文献
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