发明授权
US5846844A Method for producing group III nitride compound semiconductor substrates
using ZnO release layers
失效
使用ZnO剥离层的III族氮化物化合物半导体基板的制造方法
- 专利标题： Method for producing group III nitride compound semiconductor substrates using ZnO release layers
- 专利标题（中）： 使用ZnO剥离层的III族氮化物化合物半导体基板的制造方法
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申请号： US598134申请日： 1996-02-07
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公开(公告)号： US5846844A公开(公告)日： 1998-12-08
- 发明人: Isamu Akasaki , Hiroshi Amano , Kazumasa Hiramatsu , Theeradetch Detchprohm
- 申请人： Isamu Akasaki , Hiroshi Amano , Kazumasa Hiramatsu , Theeradetch Detchprohm
- 申请人地址： JPX Nishikasugai-gun JPX Nagoya JPX Nagoya JPX Yokkaichi
- 专利权人： Toyoda Gosei Co., Ltd.,Isamu Akasaki,Hiroshi Amano,Kazumasa Hiramatsu
- 当前专利权人： Toyoda Gosei Co., Ltd.,Isamu Akasaki,Hiroshi Amano,Kazumasa Hiramatsu
- 当前专利权人地址： JPX Nishikasugai-gun JPX Nagoya JPX Nagoya JPX Yokkaichi
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/363 ; H01L21/84 ; H01L33/00
摘要：
A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.
公开/授权文献
- US4502885A Method for making metal powder 公开/授权日：1985-03-05
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