- 专利标题： Electron beam exposure mask and method of manufacturing the same and electron beam exposure method
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申请号： US590827申请日： 1996-01-24
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公开(公告)号： US5849437A公开(公告)日： 1998-12-15
- 发明人: Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda , Takayuki Sakakibara , Satoru Sagoh
- 申请人： Satoru Yamazaki , Kiichi Sakamoto , Hiroshi Yasuda , Takayuki Sakakibara , Satoru Sagoh
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX6-056279 19940325; JPX7-009360 19950124; JPX7-020786 19950208
- 主分类号： G03F1/20
- IPC分类号： G03F1/20 ; G03F7/20 ; H01J37/317 ; G03F9/00
摘要：
In an exposure mask of the present invention, a plurality of opening regions are disposed via crossbeams, each having a size not to be resolved, along peripheral edges of island-like patterns and peninsula-like patterns for shielding transmission of charged particles.
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