发明授权
US5849625A Planar field oxide isolation process for semiconductor integrated
circuit devices using liquid phase deposition
失效
使用液相沉积的半导体集成电路器件的平面场氧化物隔离工艺
- 专利标题： Planar field oxide isolation process for semiconductor integrated circuit devices using liquid phase deposition
- 专利标题（中）： 使用液相沉积的半导体集成电路器件的平面场氧化物隔离工艺
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申请号： US807885申请日： 1997-02-26
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公开(公告)号： US5849625A公开(公告)日： 1998-12-15
- 发明人: Chen-Chiu Hsue , Gary Hong
- 申请人： Chen-Chiu Hsue , Gary Hong
- 申请人地址： TWX
- 专利权人： United Microelectronics Coporation
- 当前专利权人： United Microelectronics Coporation
- 当前专利权人地址： TWX
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L2/76
摘要：
A process for fabricating an improved planar field oxide (FOX) structure on a silicon substrate was achieved. The process involves forming recessed areas in the silicon substrate where the field oxide is require. A thin silicon oxide is formed on the surface of the recessed areas as a nucleation layer and then a thicker silicon oxide layer is selectively deposited in the recess areas by Liquid Phase Deposition (LPD). The planar FOX structure formed by LPD can be used in conjunction with a FOX structure formed by the conventional LOCal Oxidation of Silicon (LOCOS) process on the same substrate. The planar field oxide formed by LPD eliminates the bird beak structure and the lateral diffusion of the channel stop implant commonly associated with the LOCOS structure.
公开/授权文献
- USD339373S Printer cover 公开/授权日：1993-09-14
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