发明授权
- 专利标题： Method for forming high contrast alignment marks
- 专利标题（中）： 形成高对比度对准标记的方法
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申请号： US730382申请日： 1996-10-16
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公开(公告)号： US5858854A公开(公告)日： 1999-01-12
- 发明人: Chao-Chieh Tsai , Shun-Liang Hsu , Tsu Shih
- 申请人： Chao-Chieh Tsai , Shun-Liang Hsu , Tsu Shih
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L21/76
摘要：
A method of forming high contrast alignment marks on an integrated circuit wafer for patterning a layer of highly reflective electrode metal is described. A method of patterning a layer of highly reflective metal on an integrated circuit wafer using high contrast alignment marks is also described. Due to a difference in height of alignment marks and contact metal surrounding the alignment marks the alignment marks are transferred to the contour of the highly reflective electrode metal. A non reflective layer of bottom anti-reflection coating material is then used to provide high contrast at the location where the edges of the alignment marks are transferred to the highly reflective electrode metal.
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