发明授权
- 专利标题： Ferroelectric thin film device and its process
- 专利标题（中）： 铁电薄膜器件及其工艺
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申请号： US811301申请日： 1997-03-04
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公开(公告)号： US5866238A公开(公告)日： 1999-02-02
- 发明人: Ryoichi Takayama , Yoshihiro Tomita , Satoru Fujii , Masayuki Okano , Hideo Torii , Eiji Fujii , Atsushi Tomozawa
- 申请人： Ryoichi Takayama , Yoshihiro Tomita , Satoru Fujii , Masayuki Okano , Hideo Torii , Eiji Fujii , Atsushi Tomozawa
- 申请人地址： JPX Osaka
- 专利权人： Minolta Co., Ltd.
- 当前专利权人： Minolta Co., Ltd.
- 当前专利权人地址： JPX Osaka
- 主分类号： H01L37/02
- IPC分类号： H01L37/02 ; H01L41/24 ; B32B3/00
摘要：
A first ferroelectric thin film device is provided with a first substrate consisting of polycrystal, amorphous material or metal material and a first ferroelectric thin film formed on the first substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 70.times.10.sup.-7 /.degree.C. or more. At least 75% of crystal axes of the first ferroelectric thin film are oriented in -direction. A second ferroelectric thin film device is provided with a second substrate consisting of amorphous material and a second ferroelectric thin film formed on the second substrate. The average of thermal expansion coefficients of the substrate from room temperature to temperature for forming the ferroelectric thin film is 50.times.10.sup.-7 /.degree.C. or less. At least 75% of crystal axes of the second ferroelectric thin film are oriented in direction.
公开/授权文献
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