Invention Grant
- Patent Title: Transistor fabrication method
- Patent Title (中): 晶体管制造方法
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Application No.: US796038Application Date: 1997-02-05
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Publication No.: US5869375APublication Date: 1999-02-09
- Inventor: Jong-Moon Choi , Young Jin Song , Chang Reol Kim
- Applicant: Jong-Moon Choi , Young Jin Song , Chang Reol Kim
- Applicant Address: KRX Choogcheongbuk-Do
- Assignee: LG Semicon Co., Ltd.
- Current Assignee: LG Semicon Co., Ltd.
- Current Assignee Address: KRX Choogcheongbuk-Do
- Priority: KRX2734/1996 19960205
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L29/423 ; H01L29/739
Abstract:
A method for fabricating a transistor includes the steps of forming a gate insulation film on a substrate, forming a gate electrode on the gate insulation film and forming a first insulation film pattern on the gate electrode. A side wall spacer is formed at side surfaces of the first insulation film pattern and the gate electrode. The gate insulation film is etched to expose a portion of a surface of the substrate. An epitaxial layer is formed on the substrate where the gate insulation film is etched. The side wall spacer is removed and a thermal oxide film is grown on a portion corresponding to where the side wall spacer is removed and on an upper portion of the epitaxial layer. A source/drain region is formed by ion-implanting an impurity into the epitaxial layer.
Public/Granted literature
- US5168861A Direct contact water heater Public/Granted day:1992-12-08
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