- 专利标题: Structure and fabrication method for stackable, air-gap-containing low epsilon dielectric layers
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申请号: US596909申请日: 1996-03-13
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公开(公告)号: US5869880A公开(公告)日: 1999-02-09
- 发明人: Alfred Grill , Katherine Lynn Saenger
- 申请人: Alfred Grill , Katherine Lynn Saenger
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L23/485
摘要:
A structured dielectric layer and fabrication process for separating wiring levels and wires within a level on a semiconductor chip is described incorporating a lower dielectric layer having narrow air gaps to form dielectric pillars or lines and an upper dielectric layer formed over the pillars or fine lines wherein the air gaps function to substantially reduce the effective dielectric constant of the structured layer. The invention overcomes the problem of solid dielectric layers which would have the higher dielectric constant of the solid material used.
公开/授权文献
- USD331229S Computer keyboard decal 公开/授权日:1992-11-24
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