发明授权
- 专利标题： Single crystal pulling apparatus
- 专利标题（中）： 单晶拉丝机
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申请号： US774183申请日： 1996-12-26
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公开(公告)号： US5873938A公开(公告)日： 1999-02-23
- 发明人: Takashi Atami , Hisashi Furuya , Michio Kida
- 申请人： Takashi Atami , Hisashi Furuya , Michio Kida
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Mitsubishi Materials Silicon Corporation,Mitsubishi Materials Corporation
- 当前专利权人： Mitsubishi Materials Silicon Corporation,Mitsubishi Materials Corporation
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX7-341699 19951227; JPX7-341703 19951227
- 主分类号： C30B15/12
- IPC分类号： C30B15/12 ; C30B35/00
摘要：
A single crystal pulling apparatus wherein a semiconductor melt is stored in an outer crucible, and a cylindrical inner crucible which acts as a partition body, is mounted inside the outer crucible to thus form a double crucible, and a single crystal of semiconductor is pulled from the semiconductor melt inside the inner crucible. The inner crucible contains a communicating portion, which is formed when the double crucible is formed, for allowing flow of the semiconductor melt into the inner crucible, and the communicating portion incorporates an arrangement for removal of gas bubbles which have adhered to the communicating portion.
公开/授权文献
- US4119651A Cis-13-PGA.sub.2 analogs 公开/授权日：1978-10-10
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