Invention Grant
- Patent Title: Single polysilicon layer flash E.sup.2 PROM cell
- Patent Title (中): 单个多晶硅层闪光E2PROM电池
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Application No.: US179887Application Date: 1994-01-10
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Publication No.: US5886378APublication Date: 1999-03-23
- Inventor: Patrick C. Wang
- Applicant: Patrick C. Wang
- Applicant Address: OR Hillboro
- Assignee: Lattice Semiconductor Corporation
- Current Assignee: Lattice Semiconductor Corporation
- Current Assignee Address: OR Hillboro
- Main IPC: H01L21/8247
- IPC: H01L21/8247 ; H01L27/115 ; H01L29/788 ; H01L29/792
Abstract:
A flash E.sup.2 PROM cell includes a single polysilicon layer part of which makes up the floating gate of a transistor of the cell, part of which makes up an electrode of a capacitor coupled to the floating gate, and part of which makes up the gate of a second transistor of the cell.
Public/Granted literature
- US4869484A Signature opening apparatus Public/Granted day:1989-09-26
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