发明授权
- 专利标题: Semiconductor memory device and data transferring structure and method therein
- 专利标题(中): 半导体存储器件及其数据传输结构及方法
-
申请号: US189276申请日: 1994-01-31
-
公开(公告)号: US5894440A公开(公告)日: 1999-04-13
- 发明人: Masaki Tsukude , Kazutami Arimoto , Kazuyasu Fujishima , Yoshio Matsuda , Tsukasa Ooishi
- 申请人: Masaki Tsukude , Kazutami Arimoto , Kazuyasu Fujishima , Yoshio Matsuda , Tsukasa Ooishi
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX63-302841 19881129
- 主分类号: G11C11/401
- IPC分类号: G11C11/401 ; G11C7/06 ; G11C7/10 ; G11C11/409
摘要:
Each of divided bit line pairs is selectively connected to a sub-input/output line pair through transfer gates. A register is connected to the sub-input/output line pair. Data is transferred through the sub-input/output line pair between the register and a selected bit line pair. A sense amplifier is connected to each of the bit line pairs. Sense amplifiers are independently driven by separate sense amplifier activating signals. Therefore, even if data is transferred to the selected bit line pair from the register, fluctuations in potential on the bit line pair caused in such a case does not affect a sense amplifier activating signal connected to a non-selected bit line pair. As a result, data stored in the non-selected memory cell is prevented from being destroyed.
公开/授权文献
信息查询