Invention Grant
US5895941A Field effect transistor with electrode portions under T-shaped gate
structure
失效
场效应晶体管，电极部分在T形栅极结构下
- Patent Title: Field effect transistor with electrode portions under T-shaped gate structure
- Patent Title (中): 场效应晶体管，电极部分在T形栅极结构下
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Application No.: US901788Application Date: 1997-07-28
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Publication No.: US5895941APublication Date: 1999-04-20
- Inventor: Toshiaki Kitano
- Applicant: Toshiaki Kitano
- Applicant Address: JPX Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JPX Tokyo
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/335 ; H01L29/423 ; H01L29/778 ; H01L31/0328
Abstract:
A semiconductor device includes an InP substrate; an undoped InAlAs buffer layer, an undoped InGaAs active layer, and an n type InAlAs electron supply layer successively disposed on the InP substrate; a T-shaped gate electrode on the n type electron supply layer, the T-shaped gate electrode having an upper overhanging part; n type InGaAs cap layers disposed on the n type electron supply layer at opposite sides of and spaced apart from the T-shaped gate electrode, each cap layer having a portion positioned beneath the upper overhanging part of the T-shaped gate electrode; and a source electrode and a drain electrode respectively disposed on the cap layers, each of these electrodes having a portion positioned beneath the upper overhanging part of the T-shaped gate electrode.
Public/Granted literature
- US5280360A Laser screen cathode ray tube with beam axis correction Public/Granted day:1994-01-18
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