Invention Grant
US5896012A Metal ion plasma generator having magnetic field forming device located
such that a triggering is between the magnetic field forming device and
an anode
失效
具有磁场形成装置的金属离子等离子体发生器,其定位成使得在磁场形成装置和阳极之间触发
- Patent Title: Metal ion plasma generator having magnetic field forming device located such that a triggering is between the magnetic field forming device and an anode
- Patent Title (中): 具有磁场形成装置的金属离子等离子体发生器,其定位成使得在磁场形成装置和阳极之间触发
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Application No.: US908985Application Date: 1997-08-08
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Publication No.: US5896012APublication Date: 1999-04-20
- Inventor: Jun Munemasa , Alexander Elkind , James R Treglio
- Applicant: Jun Munemasa , Alexander Elkind , James R Treglio
- Applicant Address: JPX Kobe CA San Diego
- Assignee: Kabushiki Kaisha Kobe Seiko Sho,ISM Technologies, Inc.
- Current Assignee: Kabushiki Kaisha Kobe Seiko Sho,ISM Technologies, Inc.
- Current Assignee Address: JPX Kobe CA San Diego
- Main IPC: C23C14/24
- IPC: C23C14/24 ; C23C14/32 ; H01J27/04 ; H01J37/32 ; H05B31/026 ; H01J7/24
Abstract:
When a trigger discharge between a metal cathode and a trigger ring induces a vacuum-arc discharge between the cathode an anode, which vaporizes the substances of the cathode surface to produce a metal ion plasma, setting the pulse length of the arc pulse applied between the cathode and the anode to 1 msec or longer will soon short-circuit between the cathode and the trigger ring due to the vaporized substances deposited on the surface of the insulating ring. In order to solve this problem, a permanent magnet 36 for forming a magnetic field across a space between the anode 26 and the cathode 34 is provided close to the rear side of the trigger ring 35 so as to guide the substances vaporized from the cathode 34 toward the anode 26. Thereby, a longer continuous operation can be done with setting the arc pulse longer. moreover, since the permanent magnet 36 is provided at the foregoing position, the magnet does not receive a thermal load by the vacuum-arc discharge, which maintains a stable operation and makes the total construction compact.
Public/Granted literature
- US5030315A Methods of manufacturing compound semiconductor crystals and apparatus for the same Public/Granted day:1991-07-09
Information query
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