发明授权
- 专利标题: Semiconductor device having solid phase diffusion sources
- 专利标题(中): 具有固相扩散源的半导体器件
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申请号: US903387申请日: 1997-07-30
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公开(公告)号: US5898203A公开(公告)日: 1999-04-27
- 发明人: Takashi Yoshitomi , Masanobu Saito , Hisayo Momose , Hiroshi Iwai , Yukihiro Ushiku , Mizuki Ono , Yasushi Akasaka , Hideaki Nii , Satoshi Matsuda , Yasuhiro Katsumata
- 申请人: Takashi Yoshitomi , Masanobu Saito , Hisayo Momose , Hiroshi Iwai , Yukihiro Ushiku , Mizuki Ono , Yasushi Akasaka , Hideaki Nii , Satoshi Matsuda , Yasuhiro Katsumata
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX4-352324 19091211; JPX4-139335 19920529
- 主分类号: H01L21/033
- IPC分类号: H01L21/033 ; H01L21/225 ; H01L21/28 ; H01L21/336 ; H01L21/8238 ; H01L27/092 ; H01L29/08 ; H01L29/423 ; H01L29/78 ; H01L29/76
摘要:
A diffused server as a source and a drain. It is formed comprised of a deep first diffused layer and a shallow second diffused layer positioned between the first diffused layer and the channel region. In the second diffused region, a distribution in a depth direction of carriers has a profile in which the concentration is more than 5.times.10.sup.18 cm-.sup.-3 at the peak and is in correspondence with a carrier concentration of the semiconductor substrate at a depth less than 0.04 .mu.m. Since the second diffused layer has a high concentration, the short-channel effect can be suppressed. As the second diffused region, a solid phase diffusion source such as an impurity doped silicate glass is used.
公开/授权文献
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