发明授权
US5898359A Diffusion-barrier materials for thick-film piezoresistors and sensors
formed therewith
失效
用于厚膜压敏电阻器和由其形成的传感器的扩散阻挡材料
- 专利标题: Diffusion-barrier materials for thick-film piezoresistors and sensors formed therewith
- 专利标题(中): 用于厚膜压敏电阻器和由其形成的传感器的扩散阻挡材料
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申请号: US994113申请日: 1997-12-19
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公开(公告)号: US5898359A公开(公告)日: 1999-04-27
- 发明人: Marion Edmond Ellis
- 申请人: Marion Edmond Ellis
- 申请人地址: IN Kokomo
- 专利权人: Delco Electronics Corp.
- 当前专利权人: Delco Electronics Corp.
- 当前专利权人地址: IN Kokomo
- 主分类号: H01L41/08
- IPC分类号: H01L41/08 ; C03C8/20 ; G01L9/00 ; G01L9/06 ; H01C10/10
摘要:
A thick-film strain-sensing structure for a media-compatible, high-pressure sensor. The strain-sensing structure generally includes a metal diaphragm, at least one electrical-insulating layer on the diaphragm, an interface layer on the electrical-insulating layer, and at least one thick-film piezoresistor on the interface layer for sensing deflection of the diaphragm. The interface layer and the electrical-insulating layers are preferably formed by thick-film processing, as done for the piezoresistors. For compatibility with the metal diaphragm, the electrical-insulating layer has a CTE near that of the diaphragm. The interface layer is formulated to inhibit and control diffusion of the electrical-insulating layers into the piezoresistors. For this purpose, the interface layer is formed from a composition that contains, in addition to a suitable organic media, alumina, zinc oxide, and at least one glass frit mixture comprising lead oxide, a source of boron oxide such as boric acid, silica and alumina. Additional constituents of the interface layer preferably include titania, cupric oxide, manganese carbonate as a source for manganese monoxide, and cobalt carbonate as a source of cobalt oxide.
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