发明授权
US5899745A Method of chemical mechanical polishing (CMP) using an underpad with
different compression regions and polishing pad therefor
失效
使用具有不同压缩区域的底垫和使用抛光垫的化学机械抛光（CMP）的方法
- 专利标题： Method of chemical mechanical polishing (CMP) using an underpad with different compression regions and polishing pad therefor
- 专利标题（中）： 使用具有不同压缩区域的底垫和使用抛光垫的化学机械抛光（CMP）的方法
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申请号： US887695申请日： 1997-07-03
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公开(公告)号： US5899745A公开(公告)日： 1999-05-04
- 发明人: Sung C. Kim , Lei Ping Lai , Rajeev Bajaj , Adam Manzonie
- 申请人： Sung C. Kim , Lei Ping Lai , Rajeev Bajaj , Adam Manzonie
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： B24B37/04
- IPC分类号： B24B37/04 ; B24B37/10 ; B24B37/22 ; H01L21/00 ; H01L21/304
摘要：
A chemical mechanical polishing (CMP) method utilizes a polishing pad (21) and an under pad (20). The under pad (20) has an edge portion (24) and a central portion (22). The central portion (22) has either a shore D hardness less than a shore D hardness of the portion (24), greater slurry absorption than the edge portion (24), or more compressibility than the edge portion (24). This composite material under pad (20) will improve polishing uniformity of a semiconductor wafer (39). In addition, the use of the polishing pads (20 and 21) allows for greater final wafer profile control than was previously available in the art (FIGS. 4-6).
公开/授权文献
- US4155028A Electrostatic deflection system for extending emitter life 公开/授权日：1979-05-15
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