- 专利标题: Thin resist process by sub-threshold exposure
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申请号: US943089申请日: 1997-09-26
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公开(公告)号: US5905019A公开(公告)日: 1999-05-18
- 发明人: Christopher E. Obszarny
- 申请人: Christopher E. Obszarny
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: G03F7/16
- IPC分类号: G03F7/16 ; G03F7/20 ; H01L21/00
摘要:
The present invention utilizes a sub-threshold exposure step on an optically sensitive resist that is applied to a semiconductor wafer to thin the resist below the thickness which can be achieved by normal spinning and/or thinning techniques. Furthermore, the thinned resist can be re-expose to UV energies so as to develop patterns on the surface of the semiconductor wafer. An apparatus for vibrating and rotating the resist during the sub-threshold step is also disclosed herein.
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