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US5907165A INP heterostructure devices 失效
INP异质结构器件

INP heterostructure devices
摘要:
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd-Pt-Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.
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