发明授权
- 专利标题: INP heterostructure devices
- 专利标题(中): INP异质结构器件
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申请号: US71006申请日: 1998-05-01
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公开(公告)号: US5907165A公开(公告)日: 1999-05-25
- 发明人: Robert Alan Hamm , Rose Fasano Kopf , Robert William Ryan , Alaric Tate
- 申请人: Robert Alan Hamm , Rose Fasano Kopf , Robert William Ryan , Alaric Tate
- 申请人地址: NJ Murray Hill
- 专利权人: Lucent Technologies Inc.
- 当前专利权人: Lucent Technologies Inc.
- 当前专利权人地址: NJ Murray Hill
- 主分类号: H01L21/331
- IPC分类号: H01L21/331 ; H01L29/45 ; H01L29/737 ; H01L31/0328 ; H01L31/0336 ; H01L31/072 ; H01L31/109
摘要:
The specification describes a metal contact material optimized for diffused contacts to the buried emitter-base junction in DHBT devices. The metal contact material is a multilayer structure of Pd-Pt-Au which gives the required critical diffusion properties for low resistance contacts to the buried base layer without shorting to the collector layer.
公开/授权文献
- USD394264S Remote controller for video projector 公开/授权日:1998-05-12
信息查询
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