发明授权
US5908799A Apparatus for producing semiconductor using aluminum nitride bodies as
substrates
失效
使用氮化铝体作为基板来制造半导体的装置
- 专利标题： Apparatus for producing semiconductor using aluminum nitride bodies as substrates
- 专利标题（中）： 使用氮化铝体作为基板来制造半导体的装置
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申请号： US922023申请日： 1997-09-02
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公开(公告)号： US5908799A公开(公告)日： 1999-06-01
- 发明人: Hiromichi Kobayashi , Yuki Bessho , Yukimasa Mori
- 申请人： Hiromichi Kobayashi , Yuki Bessho , Yukimasa Mori
- 申请人地址： JPX
- 专利权人： NGK Insulators, Ltd.
- 当前专利权人： NGK Insulators, Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX7-218158 19950803; JPX7-218256 19950804; JPX7-218257 19950804; JPX8-207556 19960718
- 主分类号： C04B35/581
- IPC分类号： C04B35/581 ; H01L23/15
摘要：
An aluminum nitride sintered body is characterized by having a g-value of an unpaired electron in a spectrum of an electron spin resonance being not less than 2.0010. The aluminum nitride sintered body is produced by sintering a raw material composed of powdery aluminum nitride at a temperature of not less than 1730.degree. C. to not more than 1920.degree. under a pressure of not less than 80 kg/cm.sup.2.
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