发明授权
- 专利标题: Charge pump circuit for voltage boosting in integrated semiconductor circuits
- 专利标题(中): 集成半导体电路中的升压电荷泵电路
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申请号: US806560申请日: 1997-02-25
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公开(公告)号: US5912560A公开(公告)日: 1999-06-15
- 发明人: John H. Pasternak
- 申请人: John H. Pasternak
- 申请人地址: CA Fremont
- 专利权人: Waferscale Integration Inc.
- 当前专利权人: Waferscale Integration Inc.
- 当前专利权人地址: CA Fremont
- 主分类号: H02M3/07
- IPC分类号: H02M3/07 ; H03K17/06 ; H03K3/01
摘要:
A charge pump whose charge transfer switches are formed of charge transfer transistors and single pole, double throw (SPDT) switches each of which controls the gate of its corresponding transistor. Each SPDT switch has two throw contacts, one which is connected to the left diffusion of its corresponding charge transfer transistor and the other of which is connected to ground. Thus, the SPDT switch selectively connects the gate of the charge transfer transistor it controls between a diode connection (the first contact) and ground (the second contact). As a result, the charge transfer switches of the present invention are both fully on (when diode-connected) or fully off (when connected to ground).
公开/授权文献
- US4637333A Sail having a honeycomb array of pockets 公开/授权日:1987-01-20