发明授权
- 专利标题： Method of manufacturing a bonding substrate
- 专利标题（中）： 接合基板的制造方法
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申请号： US14415申请日： 1998-01-27
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公开(公告)号： US5918139A公开(公告)日： 1999-06-29
- 发明人: Kiyoshi Mitani , Katsuo Yoshizawa
- 申请人： Kiyoshi Mitani , Katsuo Yoshizawa
- 申请人地址： JPX Tokyo
- 专利权人： Shin Etsu Handotai Co., Ltd.
- 当前专利权人： Shin Etsu Handotai Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX9-032790 19970131
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/02 ; H01L21/20 ; H01L21/304 ; H01L27/12 ; H01L21/30 ; H01L21/46
摘要：
A method of manufacturing a bonding substrate is disclosed. An oxide film is formed on the surface of at least one of two semiconductor substrates, and the two substrates are brought into close contact with each other via the oxide film. The substrates are heat-treated in an oxidizing atmosphere in order to firmly join the substrates together. Subsequently, an unjoined portion at the periphery of a device-fabricating substrate is completely removed, and the thickness of the device-fabricating substrate is reduced to a desired thickness so as to yield a thin film. The surface of the thin film is then etched through vapor-phase etching in order to make the thickness of the thin film uniform. In the method, the oxide film on the unjoined portion of at least the support substrate is removed before the surface of the thin film is subjected to vapor-phase etching. The method prevents a groove from being formed in the surface of the unjoined portion (terrace portion) of the support substrate (base wafer) even when the surface of the thin film undergoes vapor phase etching.
公开/授权文献
- USD354523S Video game machine 公开/授权日：1995-01-17
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