发明授权
- 专利标题： Method for fabricating dishing free shallow isolation trenches
- 专利标题（中）： 无凹槽浅隔离沟槽的制造方法
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申请号： US982230申请日： 1997-12-17
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公开(公告)号： US5923993A公开(公告)日： 1999-07-13
- 发明人: Kashmir S. Sahota
- 申请人： Kashmir S. Sahota
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices
- 当前专利权人： Advanced Micro Devices
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/76
摘要：
A fabrication process for manufacturing integrated circuits with isolation trenches. The process includes the use of two nitride layers and an oxide layer formed by high density plasma oxidation, to provide isolation trenches free of dishing. The isolated regions are useable for fabrication microelectronic circuit devices, such as MOS transistors or flash memory devices.
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