发明授权
US5926709A Process of fabricating miniature memory cell having storage capacitor
with wide surface area
失效
制造具有宽表面积的储能电容器的微型存储单元的工艺
- 专利标题： Process of fabricating miniature memory cell having storage capacitor with wide surface area
- 专利标题（中）： 制造具有宽表面积的储能电容器的微型存储单元的工艺
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申请号： US621954申请日： 1996-03-26
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公开(公告)号： US5926709A公开(公告)日： 1999-07-20
- 发明人: Fumiki Aisou , Toshiyuki Hirota
- 申请人： Fumiki Aisou , Toshiyuki Hirota
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-072802 19950330
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/822 ; H01L21/8242 ; H01L27/108
摘要：
A node contact hole is formed in an inter-level insulating layer through an anisotropic etching using an inner conductive side wall formed in a primary opening as an etching mask, and an outer conductive side wall concurrently formed from a doped polysilicon together with a conductive plug in the node contact hole increases the surface area of a storage node electrode of a stacked storage capacitor.
公开/授权文献
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