发明授权
US5940344A Synchronous semiconductor memory device including internal clock signal generation circuit that generates an internal clock signal synchronizing in phase with external clock signal at high precision 失效
同步半导体存储器件包括内部时钟信号产生电路,其产生与外部时钟信号同步高精度的内部时钟信号

Synchronous semiconductor memory device including internal clock signal
generation circuit that generates an internal clock signal
synchronizing in phase with external clock signal at high precision
摘要:
In an internal clock signal generation circuit, a phase comparator for detecting phase difference between an external clock signal and an internal clock signal includes a transistor and a capacitor with respect to a signal line through which a clock signal corresponding to the external clock signal is transmitted, and a transistor and a capacitor with respect to a signal line through which a clock signal corresponding to the internal clock signal is transmitted. The rising timing of the signal having a more lagging phase of the signals of the two signal lines becomes more gentle. As a result, the phase difference is increased, and the phase comparator can compare the phase at high precision.
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