Invention Grant
US5945351A Method for etching damaged zones on an edge of a semiconductor
substrate, and etching system
失效
用于蚀刻半导体衬底的边缘上的损坏区域的方法和蚀刻系统
- Patent Title: Method for etching damaged zones on an edge of a semiconductor substrate, and etching system
- Patent Title (中): 用于蚀刻半导体衬底的边缘上的损坏区域的方法和蚀刻系统
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Application No.: US867115Application Date: 1997-06-02
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Publication No.: US5945351APublication Date: 1999-08-31
- Inventor: Josef Mathuni
- Applicant: Josef Mathuni
- Applicant Address: DEX Munich
- Assignee: Siemens Aktiengesellschaft
- Current Assignee: Siemens Aktiengesellschaft
- Current Assignee Address: DEX Munich
- Priority: DEX19622015 19960531
- Main IPC: H01L21/302
- IPC: H01L21/302 ; G03F7/16 ; H01J37/32 ; H01L21/00 ; H01L21/304 ; H01L21/306 ; H01L21/3065 ; H01L21/683 ; H01L29/30
Abstract:
The apparatus and method of the invention allow etching of the edge of a semiconductor substrate even where no resist is applied to the front side and back side of the semiconductor substrate. The semiconductor substrate is introduced into a protective chamber within an evacuatable process chamber. The front side and the back side of the semiconductor substrate are covered by the protective chamber except for the edge of the semiconductor substrate to be etched. The edge of the semiconductor substrate is then exposed to an etching agent. Etching products and excess etching agent are removed.
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