发明授权
- 专利标题： Method of forming a cathode assembly comprising a diamond layer
- 专利标题（中）： 形成包括金刚石层的阴极组件的方法
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申请号： US920011申请日： 1997-08-26
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公开(公告)号： US5947783A公开(公告)日： 1999-09-07
- 发明人: Christo P. Bojkov , Richard Lee Fink , Nalin Kumar , Alexei Tikhonski , Zvi Yaniv
- 申请人： Christo P. Bojkov , Richard Lee Fink , Nalin Kumar , Alexei Tikhonski , Zvi Yaniv
- 申请人地址： TX Austin
- 专利权人： SI Diamond Technology, Inc.
- 当前专利权人： SI Diamond Technology, Inc.
- 当前专利权人地址： TX Austin
- 主分类号： G09G3/22
- IPC分类号： G09G3/22 ; G09G3/34 ; H01J1/304 ; H01J9/02 ; H01J29/46
摘要：
A cathode assembly includes a substrate, a plurality of electrically conducting strips deposited on the substrate, and a continuous layer of diamond material deposited over the plurality of electrically conducting strips and portions of the substrate exposed between the plurality of electrically conducting strips.
公开/授权文献
- US5192462A Thickening agents for topical preparations 公开/授权日：1993-03-09
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