A non-volatile electrically alterable semiconductor memory devices and method for fabricating the device are disclosed. Memory cells of a split gate structure, each having a floating gate, a control gate and a select gate, are arranged in a matrix. The memory matrix is formed by interconnecting the memory cells within a memory block in parallel with each other to memory diffusion strips, and each of source and drain regions are shared within the memory block through the memory diffusion strips. The memory diffusion strips are each formed in a memory block dependent of other memory blocks and are respectively connected to each of metal bit lines through each of block select transistors, respectively. Control gates that are formed adjacent to the same portion of a drain diffusion strip are connected to form a control gate pair. The control gate pair is then connected to every other pair to thereby obviate possible disturbances during the read operation.