发明授权
- 专利标题： Method of manufacturing X-ray mask and heating apparatus
- 专利标题（中）： 制造X射线掩模和加热装置的方法
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申请号： US975112申请日： 1997-11-20
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公开(公告)号： US5953492A公开(公告)日： 1999-09-14
- 发明人: Hideki Yabe , Kenji Marumoto , Sunao Aya , Koji Kise , Hiroaki Sumitani , Takashi Hifumi , Hiroshi Watanabe
- 申请人： Hideki Yabe , Kenji Marumoto , Sunao Aya , Koji Kise , Hiroaki Sumitani , Takashi Hifumi , Hiroshi Watanabe
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-279194 19951026; JPX8-154322 19960614
- 主分类号： G03F1/22
- IPC分类号： G03F1/22 ; H01L21/027 ; H01L21/324 ; G03F9/00 ; H05B3/20
摘要：
The X-ray mask manufactured according to the present invention can solve a problem that the thin film stress of the X-ray absorber cannot be made to be zero although the mean thin film stress throughout the X-ray absorber can be made to be zero. The thin film stress distribution over the X-ray absorber 4 after the X-ray absorber 4 has been formed on a silicon substrate 1 is measured, and then inputs of electric power to heaters 9a, 9b and 9c of a hot plate 8 are changed so as to heat the X-ray absorber 4 to temperatures according to a specified temperature distribution with which the thin film stress throughout the X-ray absorber can be made to be zero.
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