Invention Grant
- Patent Title: Thermoelectric semiconductor having a sintered semiconductor layer and fabrication process thereof
- Patent Title (中): 具有烧结半导体层的热电半导体及其制造方法
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Application No.: US901791Application Date: 1997-07-28
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Publication No.: US5959341APublication Date: 1999-09-28
- Inventor: Katsuhiro Tsuno , Tsuyoshi Tosho , Hideo Watanabe
- Applicant: Katsuhiro Tsuno , Tsuyoshi Tosho , Hideo Watanabe
- Applicant Address: JPX Tokyo
- Assignee: Technova Inc. and Engineering Advancement Association of Japan
- Current Assignee: Technova Inc. and Engineering Advancement Association of Japan
- Current Assignee Address: JPX Tokyo
- Priority: JPX8-197790 19970726
- Main IPC: B22F7/00
- IPC: B22F7/00 ; H01L35/08 ; H01L35/16 ; H01L35/34 ; H02L31/058
Abstract:
A thermoelectric semiconductor is formed of a sintered semiconductor layernd metal layers arranged on sides of opposite end faces of the sintered semiconductor layer. These metal layers are to inhibit a reaction between the sintered semiconductor layer and older layers through which electrodes are joined to the sintered semiconductor layer. The sintered semiconductor layer and the metal layers have been obtained beforehand by integrally sintering a semiconductor powder layer and metal sheets arranged on sides of opposite end faces of the semiconductor powder layer.
Public/Granted literature
- US4857473A Water sampling system Public/Granted day:1989-08-15
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