发明授权
- 专利标题: Semiconductor laser device and method of designing the same
- 专利标题(中): 半导体激光器件及其设计方法
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申请号: US828034申请日: 1997-03-27
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公开(公告)号: US5960019A公开(公告)日: 1999-09-28
- 发明人: Nobuhiko Hayashi , Daisuke Ide , Akira Ibaraki
- 申请人: Nobuhiko Hayashi , Daisuke Ide , Akira Ibaraki
- 申请人地址: JPX Moriguchi
- 专利权人: Sanyo Electric Co., LTD.
- 当前专利权人: Sanyo Electric Co., LTD.
- 当前专利权人地址: JPX Moriguchi
- 优先权: JPX8-074737 19960328; JPX8-259648 19960930
- 主分类号: H01S5/20
- IPC分类号: H01S5/20 ; H01S5/22 ; H01S5/223 ; H01S5/323 ; H01S5/343 ; H01S3/19
摘要:
A semiconductor laser device comprises a cladding layer of a first conductivity type, an active layer, a cladding layer of a second conductivity type, and a current blocking layer having a stripe-shaped opening having a predetermined width W for restricting a current path and forming the current path, and having a larger band gap than that of the cladding layer of the second conductivity type and having a smaller refractive index than that of the cladding layer of the second conductivity type. A difference .DELTA.n between effective refractive indexes in a region, which corresponds to the opening, in the active layer and an effective refractive index in a region, which corresponds to both sides of the opening, in the active layer and the width W (.mu.m) of the opening are so set as to satisfy a predetermined relationship. The difference .DELTA.n between the effective refractive indexes is set by selecting the A1 composition ratio of the current blocking layer and the thickness of the cladding layer of the second conductivity type on the both sides of the opening.
公开/授权文献
- US5258355A Acceptor element for thermosublimation printing 公开/授权日:1993-11-02