发明授权
- 专利标题： Methods for the preparation of a semiconductor structure having multiple levels of self-aligned interconnection metallization
- 专利标题（中）： 用于制备具有多级自对准互连金属化的半导体结构的方法
-
申请号： US838580申请日： 1997-04-10
-
公开(公告)号： US5960254A公开(公告)日： 1999-09-28
- 发明人: John Edward Cronin
- 申请人： John Edward Cronin
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/60
- IPC分类号： H01L21/60 ; H01L21/768 ; H01L23/522 ; H01L21/463
摘要：
An improved semiconductor structure is disclosed, including at least one stud-up and an interconnection line connected thereto, wherein the stud-up and interconnection line are formed from a single layer of metal. The structure is prepared by a method in which an insulator region is first provided on a semiconductor substrate, and is then patterned and etched to define at least one opening having a pre-selected depth. Metal is deposited to fill the opening and form the interconnection line, followed by the patterning and formation of a stud-up of desired dimensions within the metal-filled opening. The lower end of the stud-up becomes connected to the interconnection line, and the upper end of the stud-up terminates at or near the upper surface of the insulator region. Other embodiments also include an interconnected stud-down.An endpoint detection technique can be used to precisely control the height of the stud-up and the width of the interconnection line.
公开/授权文献
- US4765728A Contact lens with a back surface having second-order portions 公开/授权日：1988-08-23
信息查询
IPC分类:
