A bit line recovery circuit for random access memory. The circuit includes a pair of pull-up devices, each of which is connected to a bit line of a bit line pair. Pass gates are disposed between a sense amplifier and the bit lines. The pull-up devices are cross-coupled such that the gate node of the pull-up devices are connected to the sense amplifier on the opposed side of the pass gates in order to rapidly turn on the appropriate pull-up device following a memory cell read operation.