发明授权
- 专利标题： Method of fabricating a thin film transistor
- 专利标题（中）： 制造薄膜晶体管的方法
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申请号： US975446申请日： 1997-11-21
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公开(公告)号： US5970327A公开(公告)日： 1999-10-19
- 发明人: Naoki Makita , Takashi Funai , Toru Takayama
- 申请人： Naoki Makita , Takashi Funai , Toru Takayama
- 申请人地址： JPX Kanagawa
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JPX Kanagawa
- 优先权： JPX6-156594 19940615
- 主分类号： C23C16/24
- IPC分类号： C23C16/24 ; H01L21/02 ; H01L21/20 ; H01L21/335 ; H01L21/336 ; H01L27/12 ; H01L29/78 ; H01L29/786
摘要：
A semiconductor device comprising a substrate having thereon an amorphous silicon film fabricated by a reduced pressure chemical vapor deposition, characterized in that a thin film transistor is provided by using a crystalline silicon film obtained by effecting crystal growth in parallel with the surface of the substrate at the periphery of a region containing a selectively introduced metallic element, the region being obtained by selectively introducing a metallic element capable of accelerating the crystallization of the amorphous silicon film and heating the region thereafter.
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