发明授权
US5970371A Method of forming sharp beak of poly to improve erase speed in
split-gate flash EEPROM
失效
形成尖锐尖头的方法，以提高分闸式闪存EEPROM中的擦除速度
- 专利标题： Method of forming sharp beak of poly to improve erase speed in split-gate flash EEPROM
- 专利标题（中）： 形成尖锐尖头的方法，以提高分闸式闪存EEPROM中的擦除速度
-
申请号： US110418申请日： 1998-07-06
-
公开(公告)号： US5970371A公开(公告)日： 1999-10-19
- 发明人: Chia-Ta Hsieh , Hung-Cheng Sung , Yai-Fen Lin , Chuang-Ke Yeh , Di-Son Kuo
- 申请人： Chia-Ta Hsieh , Hung-Cheng Sung , Yai-Fen Lin , Chuang-Ke Yeh , Di-Son Kuo
- 申请人地址： TWX Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TWX Hsin-Chu
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/423
摘要：
A method is provided for forming a split-gate flash memory cell having a sharp beak of poly which substantially improves the programming erase speed of the cell. The sharp beak is formed through an extra and judicious wet etch of the polyoxide formed after the oxidation of the first polysilicon layer. The extra oxide dip causes the polyoxide to be removed peripherally thus forming a re-entrant cavity along the edge of the floating gate. The re-entrant beak is such that it does not get damaged during the subsequent process steps and is especially suited for cell sizes smaller than 0.35 micrometers.
公开/授权文献
- USD430383S Single cup breast form brassiere 公开/授权日：2000-09-05
信息查询
IPC分类:
