发明授权
- 专利标题： Semiconductor memory device having a refresh-cycle program circuit
- 专利标题（中）： 具有刷新循环程序电路的半导体存储器件
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申请号： US676963申请日： 1996-07-08
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公开(公告)号： US5970507A公开(公告)日： 1999-10-19
- 发明人: Tetsuo Kato , Kiyohiro Furutani , Hideto Hidaka , Mikio Asakura
- 申请人： Tetsuo Kato , Kiyohiro Furutani , Hideto Hidaka , Mikio Asakura
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-323076 19951212
- 主分类号： G11C11/403
- IPC分类号： G11C11/403 ; G11C11/406 ; G11C11/409 ; G06F12/00
摘要：
In a semiconductor memory device, a self refresh cycle program circuit is provided and a refresh operation is conducted in accordance with one of the refresh cycles programmed in the refresh-cycle program circuit. The refresh cycle of the self-refresh mode is selected from a plurality of refresh-cycle types. A plurality of refresh modes allows a refresh cycle to be selected from a plurality of refresh-cycle types in accordance with a selected refresh mode.
公开/授权文献
- US5223759A DC brushless motor with solid rotor having permanent magnet 公开/授权日：1993-06-29
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