发明授权
- 专利标题: Method of manufacturing a semiconductor device
- 专利标题(中): 制造半导体器件的方法
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申请号: US86601申请日: 1998-05-29
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公开(公告)号: US5989974A公开(公告)日: 1999-11-23
- 发明人: Keizo Yamada , Toshihide Kuriyama
- 申请人: Keizo Yamada , Toshihide Kuriyama
- 申请人地址: JPX Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX9-141695 19970530
- 主分类号: H01L21/306
- IPC分类号: H01L21/306 ; B62D57/00 ; B81C1/00 ; B81C3/00 ; H01L21/205 ; H01L21/265 ; H01L21/762 ; H01L49/00 ; H01L21/30
摘要:
A method of manufacturing a semiconductor device having a region which is partially thinner than the rest thereof is disclosed. A semiconductor thin layer is formed on an insulating layer by an annealing treatment after implanting ions into the semiconductor substrate at a predetermined depth. A semiconductor material is formed by epitaxial growing to a predetermined thickness on the semiconductor thin layer. The the insulating layer or eliminating the insulating layer and a part of the semiconductor substrate under the insulating layer is eliminated by an etching operation.
公开/授权文献
- US5412100A Fungicidal substituted acrylic esters 公开/授权日:1995-05-02