The present invention is related to a circuit of SRAM with current-mode write-circuits. The current-mode write-operation is through the equalization technique in advance to equalize the potential in the memory cell by using the equalization transistor. After the equalization operation, the current conveyor should pass the differential current of data into the memory cell in order to make the differential current to pull out the differential voltage through the memory cell's strong positive feedback. The present invention has seven transistors in the memory cell that is different from the conventional memory cell with six transistors. Besides, the size of each transistor can also be different from the conventional design.