发明授权
- 专利标题: Synchronous semiconductor memory device operable in a burst mode
- 专利标题(中): 同步半导体存储器件可以以突发模式工作
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申请号: US61254申请日: 1998-04-17
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公开(公告)号: US5991223A公开(公告)日: 1999-11-23
- 发明人: Kunihiko Kozaru , Shigeki Ohbayashi
- 申请人: Kunihiko Kozaru , Shigeki Ohbayashi
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX9-323447 19971125
- 主分类号: G11C11/413
- IPC分类号: G11C11/413 ; G11C7/10 ; G11C11/401 ; G11C11/407 ; G11C11/409 ; G11C7/00
摘要:
Predetermined bits of an address signal taken into an address register are taken into a burst address counter and are changed in synchronization with a clock signal. The address bits from the burst address counter are applied to a block decoder for selecting a memory sub-array from the plurality of memory sub-arrays. A block address and the memory sub-array to be selected change at every clock cycle. An operation frequency of data read circuits provided for the respective memory sub-arrays can be made lower than a frequency of the clock signal. Memory cell data can be read out accurately even in a high-frequency operation.
公开/授权文献
- USD392394S Window component extrusion 公开/授权日:1998-03-17
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