发明授权
US5991849A Rewriting protection of a size varying first region of a reprogrammable
non-volatile memory
失效
重写可重新编程的非易失性存储器的大小变化的第一区域的保护
- 专利标题： Rewriting protection of a size varying first region of a reprogrammable non-volatile memory
- 专利标题（中）： 重写可重新编程的非易失性存储器的大小变化的第一区域的保护
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申请号： US833295申请日： 1997-04-08
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公开(公告)号： US5991849A公开(公告)日： 1999-11-23
- 发明人: Susumu Yamada , Toru Watanabe , Susumu Kubota , Noriyuki Ogata , Masanori Okubayashi
- 申请人： Susumu Yamada , Toru Watanabe , Susumu Kubota , Noriyuki Ogata , Masanori Okubayashi
- 申请人地址： JPX Osaka
- 专利权人： Sanyo Electric Co., Ltd
- 当前专利权人： Sanyo Electric Co., Ltd
- 当前专利权人地址： JPX Osaka
- 优先权： JPX8-088401 19960410; JPX8-102535 19960424
- 主分类号： G06F12/14
- IPC分类号： G06F12/14 ; G11C16/22 ; G06F12/00 ; G11C7/00
摘要：
A program for rewriting data in an address region B is written in an address region A which can be rewritten by an external PROM writer. After resetting the microcomputer and rewriting the program in address region A, the reset state is cancelled and the last address in address region A of the EEPROM (1) is then stored in a register (17). An address detector (18) prohibits rewriting in address region A based on an address value stored in the register (17).
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