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US5995422A Redundancy circuit and method of a semiconductor memory device 失效
冗余电路和半导体存储器件的方法

Redundancy circuit and method of a semiconductor memory device
摘要:
The present invention provides a redundancy circuit in a semiconductor memory device which has spare memory cells which can store information that can be substituted for data of defective memory cells after the completion of the manufacturing process. If addresses designating the defective memory cells are externally input, the redundancy circuit generates a defective cell relief address signal which corresponds to the address designating the defective memory cell and is used to prevent defective data stored in normal memory cells from being output and causes correction data, to be substituted for the defective data output in correspondence with the defective cell relief address.
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