发明授权
- 专利标题: Redundancy circuit and method of a semiconductor memory device
- 专利标题(中): 冗余电路和半导体存储器件的方法
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申请号: US544439申请日: 1995-11-17
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公开(公告)号: US5995422A公开(公告)日: 1999-11-30
- 发明人: Heung-Soo Im , Sang-Ki Hwang , Hyong-Gon Lee
- 申请人: Heung-Soo Im , Sang-Ki Hwang , Hyong-Gon Lee
- 申请人地址: KRX Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KRX Suwon
- 优先权: KRX94-30259 19941117
- 主分类号: G11C29/00
- IPC分类号: G11C29/00 ; G11C29/04 ; G11C7/00
摘要:
The present invention provides a redundancy circuit in a semiconductor memory device which has spare memory cells which can store information that can be substituted for data of defective memory cells after the completion of the manufacturing process. If addresses designating the defective memory cells are externally input, the redundancy circuit generates a defective cell relief address signal which corresponds to the address designating the defective memory cell and is used to prevent defective data stored in normal memory cells from being output and causes correction data, to be substituted for the defective data output in correspondence with the defective cell relief address.
公开/授权文献
- US5121167A Sweep and vacuum xerographic cleaning method and apparatus 公开/授权日:1992-06-09
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