发明授权
US05998810A Semiconductor light-emitting diode having a p-type semiconductor layer
formed on a light-emitting layer
失效
具有形成在发光层上的p型半导体层的半导体发光二极管
- 专利标题： Semiconductor light-emitting diode having a p-type semiconductor layer formed on a light-emitting layer
- 专利标题（中）： 具有形成在发光层上的p型半导体层的半导体发光二极管
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申请号： US980256申请日： 1997-11-28
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公开(公告)号： US05998810A公开(公告)日： 1999-12-07
- 发明人: Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
- 申请人： Ako Hatano , Yasuo Ohba , Hidetoshi Fujimoto , Kazuhiko Itaya , Johji Nishio
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX6-314901 19941219; JPX8-069590 19960326
- 主分类号： H01S5/323
- IPC分类号： H01S5/323 ; H01L33/00
摘要：
A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.
公开/授权文献
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