发明授权
- 专利标题: Surface treatment method
- 专利标题(中): 表面处理方法
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申请号: US40326申请日: 1998-03-16
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公开(公告)号: US6006763A公开(公告)日: 1999-12-28
- 发明人: Yoshiaki Mori , Takuya Miyakawa , Katsuhiro Takahashi , Takeshi Miyashita , Satoru Katagami
- 申请人: Yoshiaki Mori , Takuya Miyakawa , Katsuhiro Takahashi , Takeshi Miyashita , Satoru Katagami
- 申请人地址: JPX Tokyo
- 专利权人: Seiko Epson Corporation
- 当前专利权人: Seiko Epson Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX7-2950 19950111
- 主分类号: B08B3/10
- IPC分类号: B08B3/10 ; B08B7/00 ; C23C8/40 ; B08B3/04
摘要:
A method for surface treatment of a substrate is described in which a gas discharge at or about atmospheric pressure produces activated gas or active species which are then used for surface treatment of a substrate. When the discharge gas contains oxygen, for example, surface treatment forms a metal oxide film on a metal circuit on a substrate. If, however, the gas contains hydrogen or an organic substance, a metal oxide film, such as a transparent electrode formed on the surface of a liquid crystal panel, is reduced. Alternatively, by causing discharge to take place adjacent to the surface of a liquid, or bubbled through a liquid, a liquid may be used for surface treatment of a substrate without risk of thermal or electrical damage to the substrate.
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