发明授权
US6015505A Process improvements for titanium-tungsten etching in the presence of
electroplated C4's
失效
在电镀C4的存在下钛 - 钨蚀刻的工艺改进
- 专利标题： Process improvements for titanium-tungsten etching in the presence of electroplated C4's
- 专利标题（中）： 在电镀C4的存在下钛 - 钨蚀刻的工艺改进
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申请号： US960839申请日： 1997-10-30
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公开(公告)号： US6015505A公开(公告)日： 2000-01-18
- 发明人: Lawrence D. David , Lisa A. Fanti
- 申请人： Lawrence D. David , Lisa A. Fanti
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： C23F1/26
- IPC分类号： C23F1/26 ; H01L21/306 ; H01L21/308 ; H01L21/3213 ; H01L21/60 ; H01L21/00
摘要：
A process and etchant solution for chemical wet etching of thin film metals in the presence of a protected metal. The etching solution has a pH range of about 2.7 to 4.0. The etching solution may include hydrogen peroxide, potassium sulfate, and potassium EDTA, and it reduces or eliminates the incidence of etch-resistant metal without damaging the protected metal.
公开/授权文献
- US4220964A Secam recording and reproducing system 公开/授权日：1980-09-02