发明授权
US6016272A High-precision analog reading circuit for flash analog memory arrays
using negative feedback
失效
用于闪存模拟存储器阵列的高精度模拟读取电路使用负反馈
- 专利标题: High-precision analog reading circuit for flash analog memory arrays using negative feedback
- 专利标题(中): 用于闪存模拟存储器阵列的高精度模拟读取电路使用负反馈
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申请号: US60165申请日: 1998-04-14
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公开(公告)号: US6016272A公开(公告)日: 2000-01-18
- 发明人: Danilo Gerna , Roberto Canegallo , Ernestina Chioffi , Marco Pasotti , Pier Luigi Rolandi
- 申请人: Danilo Gerna , Roberto Canegallo , Ernestina Chioffi , Marco Pasotti , Pier Luigi Rolandi
- 申请人地址: ITX Agrate Brianza
- 专利权人: STMicroelectronicsS. r. l.
- 当前专利权人: STMicroelectronicsS. r. l.
- 当前专利权人地址: ITX Agrate Brianza
- 优先权: EPX978301723 19970414
- 主分类号: G11C16/28
- IPC分类号: G11C16/28 ; G11C27/00 ; G11C16/06
摘要:
An analog reading circuit having a current mirror circuit forcing two identical currents into a cell to be read and into a reference cell. An operational amplifier has an inverting input connected to the drain terminal of the cell to be read, a non-inverting input connected to the drain terminal of the reference cell, and an output connected to the gate terminal of the reference cell. The reference cell therefore forms part of a negative feedback loop which maintains the overdrive voltages of the cell to be read and the reference cell constant, irrespective of temperature variations. The reading circuit is also of high precision and has a high reading speed.
公开/授权文献
- USD395284S Curved front panel for infrastructure equipment 公开/授权日:1998-06-16