- 专利标题: Method for pattern formation and process for preparing semiconductor device
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申请号: US86610申请日: 1998-05-29
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公开(公告)号: US6017680A公开(公告)日: 2000-01-25
- 发明人: Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
- 申请人: Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
- 申请人地址: JPX Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX9-210360 19970805
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03F7/038 ; G03F7/00
摘要:
A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a .gamma.-hydroxy or .delta.-hydroxy carboxylic acid structure is partially or entirely converted to a .gamma.-lactone or .delta.-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.
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